document number: 83886 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.6, 13-oct-09 1 optocoupler, phototransistor output, with base connection cny17g vishay semiconductors description the cny17g consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6 pin plastic dual inline package. agency approvals ? ul1577, file no. e52744, double protection ? bsi: bs en 60065, bs en 60950-1 ? din en 60747-5-5 (vde 0884) ? fimko (seti): en 60950, certificate no. fi25155 features ? isolation materials according to ul94v-o ? pollution degree 2 (din/vde 0110 part 1 resp. iec 60664) ? climatic classification 55/110/21 (iec 60068 part 1) ? special construction: therefore, extra low coupling capacity of typical 0.3 pf, high common mode rejection ? low temperature coefficient of ctr ? rated impulse voltage (t ransient overvoltage) v iotm = 6 kv peak ? isolation test voltage (parti al discharge test voltage) v pd = 1.6 kv ? rated isolation voltage v iorm = 850 v rms ? thickness through insulation = 0.4 mm ? creepage current resistance according to vde 0303/ iec 60112 comparative tracking index: cti = 275 ? ctr offered in 4 groups ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? switch-mode power supplies ? line receiver ? computer peripheral interface ? microprocessor system interface ? circuits for safe protective separation against electrical shock according to sa fety class ii (reinforced isolation): - for appl. class i - iv at mains voltage 300 v - for appl. class i - iii at mains voltage 600 v according to din en 60747-5-5 (vde 0884) note g = leadform 10.16 mm; g is not marked on the body. c e b 1 8 537_3 23 1 54 6 n c c(-) a (+) v de 17201_5 order information part remarks cny17g-1 ctr 40 % to 80 %, dip-6 CNY17G-2 ctr 63 % to 125 %, dip-6 cny17g-3 ctr 100 % to 200 %, dip-6 cny17g-4 ctr 160 % to 320 %, dip-6
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83886 2 rev. 1.6, 13-oct-09 cny17g vishay semiconductors optocoupler, phototransistor output, with base connection notes (1) t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause per manent damage to the device. functional operation of the device is not implied at these or any other c onditions in excess of t hose given in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the ti me can adversely affect reliability. (2) refer to wave profile for solderin g conditions for through hole devices. note t amb = 25 c, unless otherwise specified. minimum and maximum values were tested requierements. typical val ues are characteristic s of the device and are the result of en gineering evaluations. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (1) parameter test condition symbol value unit input reverse voltage v r 5v forward current i f 60 ma forward surge current t p 10 s i fsm 3a power dissipation p diss 100 mw junction temperature t j 125 c output collector emitter voltage v ceo 32 v emitter collector voltage v eco 7v collector current i c 50 ma collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation p diss 150 mw junction temperature t j 125 c coupler isolation test voltage (rms) v iso 5000 v rms total power dissipation p tot 250 mw ambient temperature range t amb - 55 to + 110 c storage temperature range t stg - 55 to + 125 c soldering temperature (2) 2 mm from case, t 10 s t sld 260 c electrical characteristcs parameter test condition symbol min. typ. max. unit input forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0 v, f = 1 mhz c j 50 pf reverse current v r = 5 v i r 10 a output collector emitter voltage i c = 1 ma v ceo 32 v emitter collector voltage i e = 100 a v eco 7v collector emitter cut-off current v ce = 10 v, i f = 0 i ceo 10 100 na coupler collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf
document number: 83886 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.6, 13-oct-09 3 cny17g optocoupler, phototransistor output, with base connection vishay semiconductors note according to din en 60747-5-5 (see figure 2). this optocoupler is suitable for safe el ectrical isolation onl y within the safety ratings. compliance with the safety ratings shall be ensured by means of suitable protective circuits. fig. 1 - derating diagram fig. 2 - test pu lse diagram for sample test according to din en 60747-5-5/din en 60747-; iec 60747 current transfer ratio parameter test condition part symbol min. typ. max. unit i c /i f v ce = 5 v, i f = 10 ma cny17g-1 ctr 40 80 % CNY17G-2 ctr 63 125 % cny17g-3 ctr 100 200 % cny17g-4 ctr 160 320 % v ce = 5 v, i f = 1 ma cny17g-1 ctr 13 % CNY17G-2 ctr 22 % cny17g-3 ctr 34 % CNY17G-2 ctr 56 200 % maximum safety ratings parameter test condition symbol min. typ. max. unit input forward current i f 130 ma output power dissipation p diss 265 mw coupler rated impulse voltage v iotm 6kv safety temperature t si 150 c insulation rated parameters parameter test condition symbol min. typ. max. unit ac isolation test voltage (rms) f = 50 hz, t = 1 s v iso 3750 v rms tracking resistance (comparative tracking index) cti 275 partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 2) v iotm 6kv v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 v io = 500 v, t amb = 150 c (construction test only) r io 10 9 0 25 50 75 125 0 50 100 150 200 300 p tot - total po w er dissipation (m w ) t si - safety temperat u re (c) 150 94 91 8 2 100 250 phototransistor p si (m w ) ir-diode i si (ma) t 13930 t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v io w m v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83886 4 rev. 1.6, 13-oct-09 cny17g vishay semiconductors optocoupler, phototransistor output, with base connection fig. 3 - test circuit, non-saturated operation fig. 4 - test circuit, saturated operation fig. 5 - switching times switching characteristics parameter test condition symbol min. typ. max. unit delay time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t d 4s rise time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t r 7s fall time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t f 6.7 s storage time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t s 0.3 s turn-on time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t on 11 s turn-off time v s = 5 v, i c = 5 ma, r l = 100 , (see figure 3) t off 7s turn-on time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t on 25 s turn-off time v s = 5 v, i f = 10 ma, r l = 1 k , (see figure 4) t off 42.5 s channel i channel ii 95 10900 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c = 5 ma; adj u sted thro u gh inp u t amplit u de i f 0 i f 50 100 oscilloscope r l 1 m c l 20 pf channel i channel ii 95 10 8 43 r g = 50 t p t p = 50 s t = 0.01 + 5 v i c i f 0 50 1 k i f = 10 ma oscilloscope r l c l 20 pf 1 m t p t t 0 0 10 % 90 % 100 % t r t d t on t s t f t off i f i c t p p u lse d u ration t d delay time t r rise time t on (= t d + t r ) t u rn-on time t s storage time t f fall time t off (= t s + t f )t u rn-off time 96 1169 8
document number: 83886 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.6, 13-oct-09 5 cny17g optocoupler, phototransistor output, with base connection vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified fig. 6 - total power dissipat ion vs. ambient temperature fig. 7 - forward current vs. forward voltage fig. 8 - relative current transfer ratio vs. ambient temperature fig. 9 - collector dark current vs. ambient temperature fig. 10 - collector base current vs. forward current fig. 11 - collector current vs. forward current 0 50 100 150 200 250 300 040 8 0 120 p tot - total po w er dissipation (m w ) t am b - am b ient temperat u re (c) 96 11700 co u pled de v ice phototransistor ir-diode 0.1 1 10 100 1000 0 v f - for w ard v oltage ( v ) 96 11 8 62 i f - for w ard c u rrent (ma) 1.6 1.2 0. 8 0.4 2.0 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 8 0 t am b - am b ient temperat u re (c) 96 11920 ctr rel - relati v e c u rrent transfer ratio v ce = 5 v i f = 10 ma 0255075 1 10 100 1000 10 000 i ceo - collector dark c u rrent, 100 95 11026 w ith open base (na) v ce = 20 v i f = 0 t am b - am b ient temperat u re (c) 110 0.001 0.01 0.1 1 i cb - collector base c u rrent (ma) i f - for w ard c u rrent (ma) 100 95 11052 v s = 5 v 0.1 1 10 0.01 0.1 1 100 i c - collector c u rrent (ma) i f - for w ard c u rrent (ma) 100 95 11053 10 v ce = 5 v
www.vishay.com for technical questions, contact: optocoupleranswers@vishay.com document number: 83886 6 rev. 1.6, 13-oct-09 cny17g vishay semiconductors optocoupler, phototransistor output, with base connection fig. 12 - collector current vs. collector emitter voltage fig. 13 - collector emitter saturation voltage vs. collector current fig. 14 - dc current gain vs. collector current fig. 15 - current transfer ratio vs. forward current fig. 16 - turn-on/off time vs. forward current fig. 17 - turn-on/off time vs. collector current 0.1 1 10 0.1 1 10 100 v ce - collector emitter v oltage ( v ) 100 95 11054 i c - collector c u rrent (ma) 5 ma 2 ma 1 ma i f = 50 ma 20 ma 10 ma 110 0 0.2 0.4 0.6 0. 8 1.0 v cesat - collector emitter sat u ration v oltage ( v ) i c - collector c u rrent (ma) 100 95 11055 20 % u sed ctr = 50 % u sed 10 % u sed 0.01 0.1 1 10 0 200 400 600 8 00 1000 h fe - dc c u rrent gain i c - collector c u rrent (ma) 100 95 11056 v ce = 5 v 0.1 1 10 1 10 100 1000 ctr - c u rrent transfer ratio ( % ) i f - for w ard c u rrent (ma) 100 95 11057 v ce = 5 v 01015 0 10 20 30 40 50 i f - for w ard c u rrent (ma) 20 95 11017 t on /t off - t u rn-on/t u rn-off time ( s) sat u rated operation v s = 5 v r l = 1 k t off t on 5 04 i c - collector c u rrent (ma) 10 95 11016 n on-sat u rated operation v s = 5 v r l = 100 t off t on 0 5 10 15 20 8 t on /t off - t u rn-on/t u rn-off time ( s) 2 6
document number: 83886 for technical questions, contact: optocoupleranswers@vishay.com www.vishay.com rev. 1.6, 13-oct-09 7 cny17g optocoupler, phototransistor output, with base connection vishay semiconductors package dimensions in millimeters package marking 14771_1 7.12 0.3 0.25 6.5 0.3 1.2 0.1 3.5 0.3 10.16 (typ.) 7.62 typ. 0.5 0.1 4.5 0.3 2. 8 0.5 4.5 0.3 1 2 3 6 5 4 21764-27 c n y17-2 v y ww 24
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